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| CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.4A, RDS(ON) = 135m @VGS = -10V. RDS(ON) = 180m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D S D G SOT-89 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -60 Units V V A A W C 20 -2.4 -10 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 100 Units C/W Details are subject to change without notice . 1 Rev 1. 2006.Sep http://www.cetsemi.com CEA6861 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.3A VDS = -30V, ID = -2.4A, VGS = -10V VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6 13 5 39 13 11.2 2.6 1.8 -2.4 -1.2 26 10 78 26 14.8 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = -30V, VGS = 0V, f = 1.0 MHz 890 90 85 pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250A VGS = -10V, ID = -2.4A VGS = -4.5V, ID = -1.9A -1 105 135 -3 135 180 V m m BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250A VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -60 -1 100 -100 V A Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEA6861 10 8 5 25 C -VGS=10,8,6,5V -ID, Drain Current (A) -ID, Drain Current (A) 4 6 3 4 2 2 -VGS=3.0V 1 TJ=125 C -55 C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 800 600 400 200 0 0 Crss 6 12 18 24 30 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-2.4A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250A 10 1 10 0 10 -25 0 25 50 75 100 125 150 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEA6861 -VGS, Gate to Source Voltage (V) 10 V =-30V DS ID=-2.4A 8 10 2 -ID, Drain Current (A) 10 1 RDS(ON)Limit 6 1ms 10ms 1s DC 10 0 4 2 10 -1 6 TA=25 C TJ=150 C Single Pulse 10 -2 0 0 3 6 9 12 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 PDM 0.02 10 -2 0.01 t1 t2 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 |
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